PART |
Description |
Maker |
NPTB00004 |
Gallium Nitride 28V, 5W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution...
|
AML056P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
AML618L4011 |
Gallium Nitride (GaN)
|
Microsemi
|
AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
D1023UK D1023 |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时,单端)(镀金多用的DMOS射频硅场效应管(60 28V的,500MHz的单端式))
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited Microsemi, Corp.
|
L680 DGSK8-025A DGS3-025AS DGS4-025A |
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB From old datasheet system
|
IXYS, Corp. IXYS[IXYS Corporation]
|
0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
RFP-250375N6X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-375375N6Z50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|